Tunable stochastic memristors for energy-efficient encryption and computing
Influence of CuxTe1-x compositions on the resistive switching behavior The CuxTe1-xHO memristors have different switching behaviors depending on the Cu concentration (x) in the CuxTe1-x electrode. It exhibits volatile threshold switching (TS) behavior at x = 0.1 (Cu0.1Te0.9/HfO2, Fig. 1a, Supplementary Note 1 and Supplementary Fig. 1)10,11,12,13,14, and nonvolatile resistive switching (RS) behavior at x = 0.3 and 0.6. Figure 1b displays the …