Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS has developed on-chip laser diodes using quantum well (QW) and quantum dot (QD) semiconductor materials. These diodes offer high power efficiency, high-temperature operation, and a small form-factor. QDs, in particular, have gained attention due to their unique properties.
A study published in Light: Science & Applications focuses on the integration of III-V lasers with SiN microresonators using self-injection locking. This integration not only offers compactness and high-volume production but also improves stability. The researchers examined the spectral characteristics and dynamic behavior of the locked composite cavity device, taking into account carrier quantum confinement.
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a,b Linewidth FWHM of the III-V/SiN QD laser as a function of the injection current density for different QD layers (a) and QD densities (b). c,d Colormaps of the output power (left) and wall-plug efficiency (right) as functions of the QD layers (c) and QD density (d). Credit: Emad Alkhazraji, Weng W. Chow, Frédéric Grillot, John E. Bowers, and Yating Wan
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The 4D design space and the optimal points for each device. Credit: Emad Alkhazraji, Weng W. Chow, Frédéric Grillot, John E. Bowers, and Yating Wan
The study also included a genetic algorithm-based optimization analysis to identify the optimal design points for both QW and QD devices. The findings offer valuable insight for engineering design and further parametric studies.
For more information, refer to the study published in Light: Science & Applications: DOI: 10.1038/s41377-023-01172-9
Provided by Light Publishing Center, Changchun Institute of Optics, Fine Mechanics And Physics, CAS
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