Micron Technology has announced that it has begun volume shipments of the “world’s first” 176-layer 3D NAND flash memory. Micron’s 176-layer triple-level cell 3D NAND is in volume production in Micron’s Singapore fab and now shipping to customers, including through its consumer SSD product lines. The company says that it will introduce additional new products based on this technology during calendar 2021.
Representing Micron’s fifth generation of 3D NAND and second-generation replacement-gate architecture, Micron’s 176-layer NAND improves both read latency and write latency by more than 35%, claims the company. The company claims that its 176-layer NAND’s compact design is ideal for solutions using small form factors.
As per the company, the 176-layer NAND offers improved quality of service (QoS2), a critical design criterion for data center SSDs. Micron’s fifth generation of 3D NAND also features a maximum data transfer rate at 1,600 megatransfers per second (MT/s) on the Open NAND Flash Interface (ONFI) bus, a 33% improvement as claimed by the company.
Scott DeBoer, executive vice president of technology and products at Micron, said: “Micron’s 176-layer NAND sets a new bar for the industry, with a layer count that is almost 40% higher than our nearest competitors. Combined with Micron’s CMOS-under-array architecture, this technology sustains Micron’s industry cost leadership.”